The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Mar. 26, 1993
Hiroyuki Nagasawa, Akishima, JP;
Minoru Sugawara, Akigawa, JP;
Kazuhide Yamashiro, Hachiouji, JP;
Masato Kobayashi, Tokyo, JP;
Yohichi Yamaguchi, Higashimurayama, JP;
Hoya Corporation, Tokyo, JP;
Abstract
In a process for the formation of SiC films by a low pressure CVD method using a hot-wall type, a dichlorosilane gas and an acetylene gas are used as a source gas, the flow velocity of the source gases in a reactor is set at not less than 70 cm/second, and the temperature for heating the reactor is set at not more than 1,000.degree. C., whereby SiC films having excellent uniformity in the film thickness and film properties on the surface of one substrate and among different substrates can be produced at a high mass productivity without causing any damage to the reactor from heat during the film formation.