The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 1995

Filed:

Dec. 09, 1992
Applicant:
Inventors:

Ronald C Pennell, Chandler, AZ (US);

Ira E Baskett, Tempe, AZ (US);

Lynn W Ford, Scottsdale, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156647 ; 156662 ; 1566951 ; 156649 ;
Abstract

A method of etching a semiconductor wafer includes providing a wafer having a portion thereof to be etched. A highly doped region is formed in the periphery of the wafer which is subsequently etched. The highly doped region of the wafer is substantially etch resistant to an etchant relative to the portion of the wafer being etched.


Find Patent Forward Citations

Loading…