The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 1995

Filed:

Nov. 08, 1993
Applicant:
Inventor:

Ping Wang, Saratoga, CA (US);

Assignee:

Silicon Storage Technology, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H03K / ;
U.S. Cl.
CPC ...
327 51 ; 36518907 ; 365196 ; 365210 ; 327108 ; 327541 ; 327530 ; 327546 ;
Abstract

A sensing circuit for a floating gate memory device is disclosed. The sensing circuit has a first voltage amplifier which generates a first output voltage, and a current amplifier which receives the first output voltage and generates a first output current in response thereto. The first voltage amplifier has a control transistor which generates a first output voltage in response to the memory device being in one state and a second output voltage in response to the memory device being in another state. The circuit also comprises a dummy cell, a second voltage amplifier connected thereto for generating a second output voltage. A second current amplifier receives the second output voltage and generates a second output current in response thereto. A comparator receives the first and second output currents, compares them, and generates an output indicative of the state of the memory device.


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