The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Sep. 17, 1993
David G Armour, Salford, GB;
Johnathan G England, Horsham, GB;
Neil Bryan, Hull, GB;
Jakob A Van der Berg, Didsbury, GB;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An ion implanter for implanting ions into a semiconductor wafer comprises means for generating an ion beam, means for receiving charged particles ejected from the ion beam, first means for rejecting those of the received charged particles below a first predetermined energy, second means for rejecting those of the received charged particles above a second predetermined energy, the first predetermined energy being lower than the second predetermined energy. The ion implanter further comprises means to count the number of received charged particles between the first and second predetermined energies, and scanning means for scanning the first and second predetermined energies to determine the energy at which the number of received charged particles between the first and second predetermined energies is a maximum.