The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Nov. 02, 1993
Applicant:
Inventors:
Chris Van de Walle, Menlo Park, CA (US);
David P Bour, Cupertino, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ;
U.S. Cl.
CPC ...
372 43 ; 372 45 ;
Abstract
A semiconductor laser source using a strained active layer of InGaAsN, introduced by the addition of N in the alloy, to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range above 850 nm. The presence of N in the alloy reduces the lattice constant and produces the desired strain effect, i.e., biaxial tension which raises the light hole band (yielding TM polarization) and produces a narrowing of the band gap. Adding In can reduce the strain in the alloy while maintaining the desired band gap and light-hole/heavy-hole ordering.