The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1995
Filed:
Aug. 30, 1993
Applicant:
Inventors:
Yoshinobu Tarutani, Yamanashi, JP;
Tokuumi Fukazawa, Tachikawa, JP;
Uki Kabasawa, Kokubunji, JP;
Kazumasa Takagi, Tokyo, JP;
Akira Tsukamoto, Kodaira, JP;
Masahiko Hiratani, Akishima, JP;
Toshikazu Nishino, Kawasaki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ; H01B / ;
U.S. Cl.
CPC ...
505193 ; 505191 ; 505220 ; 505238 ; 257 36 ; 257 39 ;
Abstract
Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.