The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1995
Filed:
May. 18, 1993
Applicant:
Inventors:
Assignee:
The Furukawa Electric Co., Ltd., Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 14 ; 117 13 ; 117201 ; 117208 ;
Abstract
A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.
Yoshida, Seikoh. (1995). Method of growing single crystal of compound semiconductors (U.S. Patent No. 5379717). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5379717
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile