The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1994
Filed:
May. 09, 1994
Applicant:
Inventors:
Bradley P Smith, Austin, TX (US);
Thomas S Kobayashi, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437 70 ; 437974 ; 437968 ; 148D / ;
Abstract
A field isolation region is formed by a thermal oxidation followed by a polishing step. In forming the field isolation region, an opening is formed within a nitride layer, but the substrate is not etched. The field isolation region is formed and extends above the opening in the nitride layer. After forming the field isolation region, the substrate is polished, such that the surfaces of the field isolation region and silicon nitride layer are co-planar. The process may be easily integrated into an existing process flow and still provides an integrated circuit having an acceptable field threshold voltage.