The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1994
Filed:
Aug. 05, 1993
Applicant:
Inventors:
Shwu Jen Jeng, Fishkill, NY (US);
Jerzy Kanicki, Katonah, NY (US);
David E Kotecki, Hopewell Junction, NY (US);
Christopher C Parks, Beacon, NY (US);
Zu-Jean Tien, Saratoga, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
428336 ; 257537 ; 257538 ; 257636 ; 257646 ; 361322 ; 428446 ; 428469 ; 428472 ; 428701 ; 428702 ; 428698 ;
Abstract
A polyemitter structure having a thin interfacial layer deposited between the polysilicon emitter contact and the crystalline silicon emitter, as opposed to a regrown SiO.sub.x layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact.