The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1994
Filed:
Feb. 17, 1993
Fusaoki Uchikawa, Hyogo, JP;
Shigeru Matsuno, Hyogo, JP;
Shin-ichi Kinouchi, Hyogo, JP;
Toshihisa Honda, Hyogo, JP;
Takeharu Kuroiwa, Hyogo, JP;
Hisao Watarai, Hyogo, JP;
Takashi Higaki, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.