The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Sep. 24, 1993
Applicant:
Inventors:
Chin-Ching Huang, San Jose, CA (US);
Elizabeth C Galindo, San Jose, CA (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257691 ; 257705 ; 257701 ;
Abstract
A multi-layer package for semiconductor dies using two different types of dielectric materials improves the performance of a semiconductor package. The first material having a high dielectric constant is placed between the power and ground planes to form a decoupling capacitor and the second material having a low dielectric constant is used to contact the signal traces. Silicon carbide is preferred for the high dielectric constant material.