The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Feb. 18, 1993
Applicant:
Inventor:
Shizuo Oguro, Tokyo, JP;
Assignee:
NEC Corporation, Shiba, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437101 ; 437186 ; 437191 ; 437233 ; 437919 ; 257377 ; 257385 ; 257646 ;
Abstract
A method of fabricating a semiconductor device, in particular of forming a polysilicon film on a step portion of an insulation film made by a trench or a contact hole is disclosed which includes the steps of depositing an amorphous silicon film on the step portion while doping impurities into the amorphous silicon film and carrying out heat treatment to convert the amorphous silicon film into a polycrystalline silicon film, thereby the polysilicon film on a step portion being formed.
Oguro, Shizuo. (1994). Method for fabricating capacitor having polycrystalline silicon film (U.S. Patent No. 5371039). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5371039
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile