The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Mar. 08, 1991
Applicant:
Inventor:
Leuh Fang, Santa Clara, CA (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437194 ;
Abstract
A process for the fine replication of aluminum-based metallizations on semiconductor devices. A layer of material, such as silicon dioxide or oxynitride, that is resistant to the chlorine-based etchants that readily attack aluminum and aluminum alloys is deposited upon an aluminum-based metallization layer. A relatively thin layer of photoresist is deposited thereover and developed. Etchant gases attack the dielectric layer, creating a patterned hard mask for subsequent etching of the underlying metal.