The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Mar. 24, 1993
Hitachi, Ltd., Tokyo, JP;
Abstract
At an effective exhaust speed of 1200 liter/s, high frequency power with power surface density of 4.5 W/cm.sup.2 is made to discharge high density plasma, thereby carrying out dry etching. With a gas residence time of 100 ms or less, a gas flow rate controller is provided which has a response time substantially equal to the gas residence time. Etching can be performed at high speed with deposit reaction restrained and high ion current density. Because of the enhanced ion current density, etching providing high selectivity can be made with lowered ion energy. The time required for gas exchange in time modulation etching, multi-step etching and attachment/removal of electrostatic adsorption can be shortened to improve the etching throughput.