The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Mar. 24, 1993
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A compound semiconductor device including a semiconductor substrate having (100) plane as a crystal growth plane, a first semiconductor layer as an electron traveling layer and a second semiconductor layer for supplying electrons to the electron traveling layer. The first semiconductor layer is formed on the semiconductor substrate and has a different lattice constant from the semiconductor substrate so that a first strain is applied in the first semiconductor layer in a first strain direction. The second semiconductor layer is formed on the first semiconductor layer and has a different lattice constant from the first semiconductor layer to thereby apply a second strain to the second semiconductor layer. The second strain has a direction that is inverse to the first strain direction. In addition, the thickness of the semiconductor layer is defined so as to compensate for the first strain applied to the first semiconductor layer by the second strain applied to the second semiconductor.