The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Feb. 03, 1993
Seiji Samukawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In the ECR plasma generating method, the microwave introduced into the plasma formation chamber is oscillated at frequencies in the range of a predetermined bandwidth, and the magnetic field applied to the introduced microwave has the flux densities in the range corresponding to the frequency bandwidth so as to meet the ECR condition, resulting a high density ECR plasma. The frequency bandwidth is at least +-4% of the center frequency of 2.45 GHz. The gradient of the magnetic field at the ECR area is at most 10 Gauss/cm. When a substrate is processed by the plasma generated by using the ECR, the ECR area is formed at a position at least 5 cms away from the microwave introducing window.