The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 1994

Filed:

Jan. 18, 1994
Applicant:
Inventors:

Ryuichi Ebinuma, Kawasaki, JP;

Nobutoshi Mizusawa, Yamato, JP;

Masayuki Suzuki, Zama, JP;

Shinichirou Uno, Atsugi, JP;

Tetsuzo Mori, Atsugi, JP;

Hiroshi Kurosawa, Atsugi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K / ;
U.S. Cl.
CPC ...
378 34 ; 378160 ;
Abstract

Exposure control method and apparatus particularly suitably usable in an X-ray exposure apparatus, for exposing a mask and a wafer to radiation (X-rays) from a synchrotron to transfer a pattern formed on a mask onto the wafer, is disclosed. A shutter device for controlling passage and interception of the synchrotron radiation is provided between the synchrotron and the wafer. The shutter device includes a blade member having a leading edge and a trailing edge which are rectilinearly movable in a direction in which there exists non-uniformness in illuminance of the radiation. The leading edge is used to determine the timing of start of passage of the radiation to the wafer, while the trailing edge is used to determine the timing of interception of the radiation. The moving speeds of the leading edge and the trailing edge are controlled independently of each other to provide different exposure times for different portions of an exposure region on the wafer, in accordance with the non-uniformness in illuminance. By this, the amount of absorption of radiation by a resist material on the wafer can be make uniform throughout the exposure region.


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