The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Aug. 11, 1992
Applicant:
Inventor:
Mamoru Ishida, Yokohama, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257754 ; 257 64 ; 257412 ;
Abstract
A MIS semiconductor device comprises, on a silicon wafer, a gate oxide layer, a polysilicon gate electrode comprising a gate layer of polysilicon of grain size of not less than 0.3 .mu.m doped with boron in a doping amount of not less than 3.times.10.sup.19 atoms/cm.sup.3, and a gate insulation layer, provided with metal electrodes.
Ishida, Mamoru. (1994). Mis semiconductor device with polysilicon gate electrode (U.S. Patent No. 5365109). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5365109
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile