The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
May. 03, 1993
Yuichi Ando, Sanda, JP;
Koichi Sogawa, Kobe, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A semiconductor memory device includes a substrate, a first diffusion region composed of at least one longitudinal and continuous source region which is disposed on the substrate and commonly used for a plurality of memory transistors, and a second diffusion region composed of at least one longitudinal and continuous drain region which is disposed in parallel with the first diffusion region and commonly used for the plurality of memory transistors. A refractory metal film is disposed on each of the first and second diffusion regions. An electric insulation film is disposed on the refractory metal film. A plurality of parallel gate electrodes are disposed crossing over the first and second diffusion regions. And a gate oxide film is arranged to electrically insulate the gate electrodes from the diffusion regions.