The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
Feb. 26, 1993
Thomas G Mallon, Santa Clara, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
An improved Faraday Cage is provided for use in reducing ion damage to semiconductor wafers during plasma etching. The improved Faraday Cage consists of a cylindrical metallic chamber having a cap at one or more ends. Semiconductor wafers are placed within the Cage and the Cage is suitably disposed within a plasma etcher. The caps substantially reduce the amount of harmful radiation which can enter the Cage and thereby ion damage to the wafers contained therein. The improved Faraday Cage can be conveniently integrated with a barrel-style plasma etcher by securing one of the Cage caps to the door of the plasma etcher such that opening and closing the door serves to disengage and engage one of the caps from the Cage.