The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1994
Filed:
Jan. 22, 1993
Applicant:
Inventors:
Soichi Nadahara, Tokyo, JP;
Kikuo Yamabe, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 11 ; 437 10 ; 437 12 ; 437247 ; 148D / ;
Abstract
A method of manufacturing a semiconductor device, which comprises the steps of providing a semiconductor substrate having a first primary surface which is designated to form the semiconductor device and a second primary surface opposite from the first primary surface, the substrate containing contaminants therein; forming a boron-doped layer on the second primary surface of the substrate; and absorbing the contaminants into the boron-doped layer.