The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Aug. 12, 1993
Hiroshi Naruse, Kawasaki, JP;
Shin-ichi Taka, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si.sub.1-x Ge.sub.x (1>x>0).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile