The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Nov. 08, 1993
Jan Visser, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A substrate (2) is formed with a surface layer from a gas phase with a vapour in a device having a reactor chamber (1) and a reservoir (4), which vapour is generated through evaporation of a substance (5) in the reservoir (4) and is conducted to the reactor chamber (1) through a gas line (8) (Chemical Vapour Deposition (CVD)). According to the invention, the vapour is conducted from the reservoir (4) to the reactor chamber (1) in that it is pumped from the reservoir (4) to the reactor chamber (1) by a pump (9) included in the gas line. The use of the pump renders the method very flexible. Thus the vapour flow can be easily adapted through adaptation of a pumping rate associated with the pump. In addition, the vapour flow is not dependent on a process pressure which prevails in the reactor (1).