The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
May. 06, 1992
Reinhard Schauer, Laufen, DE;
Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH, Burghausen, DE;
Abstract
For the production of high-quality electronic components based on semiconductors, semiconductor wafers are needed which have a substantially lower oxygen concentration in the wafer region near the surface in which the components are integrated than in the other wafer region. This region, known as 'denuded zone,' was hitherto obtained by prolonged heat treatment of the wafers in a batch reactor as a consequence of partial diffusion of the oxygen out from the substrate. In the process according to the invention, the low-oxygen region is produced by the epitaxial deposition of two differently doped semiconductor layers on the wafer surface in a single-wafer reactor.