Semiconductor wafer temperature determination by optical measurement of

Abstract

A method and apparatus are provided for measuring the temperature of articles such as semiconductor wafers in a sealed chamber of a processing apparatus such as a batch preheating module of a semiconductor wafer processing cluster tool. Wafers of generally known nominal diameter and coefficient of thermal expansion are placed at a known initial temperature into a processing chamber which is then sealed. A pair of beams of parallel light are passed by opposite edges of the wafer and the uninterrupted light from both beams are detected and summed. When the wafer is heated in processing, light from the beams is measured again. Expansion of the wafers changes the amount of uninterrupted light detected, and the changed amount of light is measured. From the measurement, the initial temperature, the nominal diameter and the known coefficient of expansion, processing temperature is calculated and displayed or used to control chamber heaters. The beams are preferably angled to the wafer planes so that vertical alignment is not critical and so that the beams are interrupted by a single wafer when in a stack. The signals from the detectors can be used to vertically position the wafers.