The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
Dec. 21, 1992
Isamu Namose, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The present invention relates to a semiconductor device and a method for manufacturing the same comprising the steps of: forming an oxidation layer on the semiconductor substrate having a predetermined conductivity; introducing impurities having the same conductivity as that of the semiconductor substrate into the semiconductor substrate; forming an anti-oxidation layer on said oxidation layer; removing an arbitrary portion of said anti-oxidation layer; growing the oxidation layer by thermally oxidizing the semiconductor substrate to form the device isolation layer; and removing said anti-oxidation layer. Since the impurities are introduced into the region ranging from the device region to the device isolation region before the anti-oxidation layer is formed, the profile of the impurity concentration distribution in the boundary region between the device region and the device isolation region is smooth. Accordingly it is possible, for example, to prevent narrow channel effects of a transistor and to remove a bird's beak region simply.