The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1994
Filed:
Mar. 23, 1994
Phillip M Kwong, Folsom, CA (US);
Sachidanandan Sambandan, Folsom, CA (US);
Sherif R Sweha, El Dorado Hills, CA (US);
Duane R Mills, Folsom, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A nonvolatile memory device is described. The memory device includes a main memory array for storing data. The main memory array comprises a first block and a second block. A redundant memory array comprises a first redundant block and a second redundant block. The first redundant block comprises a first redundant column of memory cells and a second redundant column of memory cells. The second redundant block comprises a third redundant column of memory cells and a fourth redundant column of memory cells. A content addressable memory (CAM) comprises a first set of CAM cells for storing a first address of a first defective column in the main memory array and a second set of CAM cells for storing a second address of a second defective column in the main memory array. The first set of CAM cells cause the first redundant column in the first redundant block to replace the first defective column when the first defective column is in the first block. The first set of CAM cells cause the third redundant column in the second redundant block to replace the first defective column when the first defective column is in the second block. The second set of CAM cells cause the second redundant column in the first redundant block to replace the second defective column when the second defective column is in the first block. The second set of CAM cells cause the fourth redundant column in the second redundant block to replace the second defective column when the second defective column is in the second block.