The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Oct. 31, 1991
Ying T Loh, Saratoga, CA (US);
Chung S Wang, Fremont, CA (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
In a method for producing a transistor with an overlapping gate region, a gate region is placed on a substrate between two source/drain regions. Spacers are placed around the gate region. The spacers are formed of dielectric material. A thin layer of polysilicon is deposited over the two source/drain regions and over electrically insulating regions adjacent to the two source/drain regions. Portions of the thin layer of polysilicon are oxidized to electrically isolate the two source/drain regions. A metal-silicide layer is formed on the portions of the thin layer of polysilicon which are not oxidized. The metal-silicide layer is connected to a metal layer. The electrical contact of the metal-silicide layer and the metal layer is over an electrically insulating layer.