The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Mar. 31, 1992
Applicant:
Inventors:
Anne K Gregory, Sunnyvale, CA (US);
Michael P Brassington, Sunnyvale, CA (US);
Shi-Qing Wang, Campbell, CA (US);
Norman E Abt, Burlingame, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365201 ; 365145 ; 257295 ; 3241581 ;
Abstract
A screening process for ferroelectric memory devices that provides a greater degree of confidence in the mechanical and thermal stability of the ferroelectric material than prior art screening processes. A correspondingly higher degree of confidence in the reliability of the screened part results.