The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Jan. 28, 1993
Applicant:
Inventor:
Isamu Namose, Nagano, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156626 ; 156627 ; 156643 ;
Abstract
In a semiconductor device manufacturing apparatus for performing an etching operation with a reaction gas, in which three electrodes, namely, upper, intermediate and lower electrodes, are arranged parallel to one another, and the intermediate electrode is in the form of a grid, having a number of through-holes, the axis of at least one of the through-holes in the intermediate electrode is inclined with respect to the central axis of the intermediate electrode. Accordingly, etching energy is uniformly applied to the entire surface of a material to be etched, thereby to achieve etching uniformly both in speed and in configuration.