The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1994
Filed:
Apr. 16, 1993
Shao-Fu S Chu, Poughkeepsie, NY (US);
Kyong-Min Kim, Hopewell Junction, NY (US);
Shaw-Ning Mei, Wappingers Falls, NY (US);
Victor R Nastasi, Hopewell Junction, NY (US);
Somnuk Ratanaphanyarat, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A vertical bipolar transistor is constructed with reduced step height by codeposition of a polysilicon base contact member and an epitaxial device layer, thereby placing the base contact below the device surface, and by the use of a doped glass layer as a dopant source for the base contact and as a dopant source to provide a continuous conductive path to the base, and as the dielectric separating the base contact from the emitter contact, and as an etch stop when forming the base implantation aperture.