The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1994
Filed:
Jun. 14, 1993
Teruo Uemura, Kawasaki, JP;
Yukio Kawase, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory device comprises a non-volatile memory cell array having a plurality of memory cells, enhancement type load transistors having a threshold voltage, and at least one peripheral circuit, such as level shifters, a column decoder, etc., including enhancement type transistors having a threshold voltage. For increasing the writing speed of the memory cells, the threshold voltage of the enhancement type load transistors is set so that it is different from that of the enhancement type transistors of the peripheral circuit. For example, the threshold voltage of the enhancement type load transistors is lower than that of the enhancement type transistors of the peripheral circuit.