The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1994
Filed:
Jan. 22, 1993
Applicant:
Inventors:
Jung Lin, Cupertino, CA (US);
John E Turner, Woodside, CA (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437192 ; 437190 ; 437195 ; 437200 ; 257764 ;
Abstract
A method of forming interconnects for submicron integrated circuits that allows use of titanium-tungsten as the interconnect material. The inherent instability of titanium-tungsten to oxidation is addressed by a nitridation process that includes exposing the interconnect to an ambient containing nitrogen (NH.sub.3) at an elevated temperature. Typically, the process is a rapid thermal anneal. A local interconnect may be formed, whereafter an insulating layer can be deposited at a high temperature without causing oxidation within the local interconnect that would adversely affect the resistivity of the material.