The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Feb. 22, 1993
Chang-Ming Hsieh, Fishkill, NY (US);
Louis L Hsu, Fishkill, NY (US);
Victor J Silvestri, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a semiconductor structure, comprising the steps of: providing a monocrystalline semiconductor device region of a first conductivity type; forming a layer of intrinsic monocrystalline semiconductor material over the device region; forming a layer of insulating material over the layer of intrinsic monocrystalline semiconductor material; forming a conductive contact over a portion of the layer of insulating material; forming an aperture extending through the conductive contact, and the layers of insulating material and intrinsic monocrystalline semiconductor material to define an aperture exposing a selected portion of the layer of intrinsic monocrystalline semiconductor material; and forming a layer of semiconductor material of a second conductivity type including a monocrystalline portion disposed epitaxially over the device region portion and a polycrystalline portion extending onto the wall of the conductive contact within the aperture.