The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Aug. 26, 1991
Carlos A Mazure, Austin, TX (US);
Marius K Orlowski, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A field effect transistor, FET, (11) having a gate dielectric of varying thickness (14, 24) to improve device performance. The FET (11) is made on a substrate (10) and has a control electrode, or gate (16), and two current electrodes, or source and drain regions (28), which are separated by a channel region. The gate (16) is separated from the channel region by a gate dielectric. The gate dielectric has a centrally located first region that is of a first thickness (14) and a second region which is adjacent a perimeter of the first region that is of a second thickness (24). The second thickness (24) is made greater than the first thickness (14).