The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Oct. 23, 1992
Abstract
Light in an ultraviolet region is applied to a first sample of single-crystalline silicon substrate and a sample of silicon thin film to be evaluated respectively, to obtain wavelength dependency of a ratio (reflection intensity ratio) K(.lambda.) between reflection light intensity values of the samples. A straight line connecting points indicating reflection intensity values at wavelengths 235 nm and 320 nm is obtained to subtract an actual reflection intensity ratio Kr from a virtual reflection intensity ratio Ki provided by the straight line with respect to a wavelength of 270 nm, thereby obtaining an index .DELTA.Ks. In a similar manner, an index .DELTA.Ka is obtained as to a second sample of silicon which is composed of only true amorphous phases. The degree of non-crystallization of the silicon thin film to be obtained is evaluated by comparing the index .DELTA.Ks with the index .DELTA.Ka.