The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Feb. 14, 1992
Applicant:
Inventors:
Christophe J Chevallier, Mountain View, CA (US);
Asim A Bajwa, San Jose, CA (US);
Darrell D Rinerson, Cupertino, CA (US);
Steve K Hsia, Saratoga, CA (US);
Assignee:
Catalyst Semiconductor, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365226 ; 365218 ; 36518901 ; 365900 ;
Abstract
A memory device is disclosed that employs hot electron injection for programming operations and Fowler-Nordheim tunneling for erase operations. The memory device requires only a single 5 volt power supply and does not require an external high voltage supply for program or erase operations. The memory device includes a charge pump section that internally generates the high voltage required for programming and erase operations. The same charge pump section is used for both program and erase power requirements.