The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Nov. 12, 1991
Applicant:
Inventors:
Richard W Gregor, Allentown, PA (US);
Chung W Leung, Allentown, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437235 ; 437238 ; 437240 ;
Abstract
A method for wet etching disposable spacers in silicon integrated circuits is provided. Illustratively, a pair of spacers is formed over a polysilicon substrate. A second pair of spacers is formed from doped silicon dioxide over the first pair of spacers. Then the second pair of spacers is etched away with NH.sub.4 OH/H.sub.2 O.sub.2, thus providing a means for defining the underlying polysilicon layer, e.g., by etching.
Gregor, Richard. (1994). Flash eeprom fabrication process that uses a selective wet chemical etch (U.S. Patent No. 5312781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5312781
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile