The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Apr. 20, 1993
Hiroshi Kamio, Tokyo, JP;
Kenji Araki, Tokyo, JP;
Yoshinobu Shima, Tokyo, JP;
Makoto Suzuki, Tokyo, JP;
Takeshi Kaneto, Tokyo, JP;
Yasumitsu Nakahama, Tokyo, JP;
Takeshi Suzuki, Tokyo, JP;
Akio Fujibayashi, Tokyo, JP;
Toshiba Ceramics Co., Handano, JP;
Abstract
An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.