The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Feb. 24, 1993
Applicant:
Inventors:
Daitei Shin, Kawasaki, JP;
Hideki Harada, Kagoshima, JP;
Assignees:
Fujitsu Limited, Kanagawa, JP;
Kyushu Fujitsu Electronics Limited, Kagoshima, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437231 ; 437235 ; 437238 ; 427344 ; 427387 ; 4273977 ;
Abstract
A thick planarization layer of silicon dioxide that is heat resistant is provided by coating a polysilazane layer over a substrate having steps and firing the polysilazane layer in an oxygen-containing atmosphere to convert the polysilazane to silicon dioxide. The temperature of this conversion may be as low as 400.degree. to 450.degree. C. while a higher firing or curing temperature is preferable to obtain a more densified oxide layer.