The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 1994

Filed:

Feb. 07, 1992
Applicant:
Inventors:

Jan Visser, Eindhoven, NL;

Lukas De Boer, Nijmegen, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437229 ; 437225 ; 156643 ; 1566591 ;
Abstract

During the manufacture of a semiconductor device in a semiconductor substrate, masks of photoresist are used for selecting given regions to be processed. This photoresist is stripped by subjecting the semiconductor substrate in a processing chamber to an oxygen-containing plasma after-glow, that is passed over the photoresist. In order to limit the penetration of inorganic contaminations released from the photoresist into the silicon oxide layer of the semiconductor substrate, according to the invention, the semiconductor substrate is connected via a first electrode to the positive terminal and via a second electrode arranged at a certain distance therefrom in the processing chamber to the negative terminal of an electric supply source in such a manner that an electrical field is adjusted between the silicon oxide layer and the plasma. The second electrode may be the electrically conducting wall of the processing chamber.


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