The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Mar. 26, 1993
Applicant:
Inventors:
Chuen-Der Lien, Mountain View, CA (US);
Jimmy J Lee, Palo Alto, CA (US);
Daniel J Liao, Pleasanton, CA (US);
Joe F Santandrea, Los Altos Hills, CA (US);
Assignee:
Integrated Device Technology, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 437162 ; 437182 ; 437183 ; 437192 ;
Abstract
A passive semiconductor structure for reduction of the mutual capacitance between parallel conductors, with two parallel conductors separated from a substrate by a first dielectric layer and covered by a second dielectric layer. The second dielectric layer having a cavity formed between these conductors, whereby the effective relative dielectric constant of the medium between these conductors is reduced.