The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 1994

Filed:

Jun. 29, 1992
Applicant:
Inventors:

Yasunori Chikawa, Nara, JP;

Shigeyuki Sasaki, Nara, JP;

Katsunobu Mori, Nara, JP;

Takamichi Maeda, Nara, JP;

Masao Hayakawa, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437183 ; 437189 ; 437192 ; 437194 ;
Abstract

A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.


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