The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Jul. 20, 1992
Masahiko Doki, Sagamihara, JP;
Kiyoshi Ooiwa, Yokosuka, JP;
Fujitsu Limited, Kanagawa, JP;
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
Provided is a plasma processing apparatus and method which has a plasma generating chamber into which gas is introduced and microwaves are transmitted, thereby generating plasma. The plasma is introduced into a processing chamber, in which a semiconductor substrate to be processed resides. An RF generator and DC generator are mixed together and are synchronized with the microwaves, such that they are applied to the substrate at the same times the microwaves act upon the gas to form plasma. Thus, variance of the DC bias and RF bias can be independently controlled, and damage to the substrate is reduced. In another embodiment, an RF bias voltage modulation circuit is used to shape the RF waveform in accordance with predetermined patterns.