The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Oct. 04, 1991
Tetsuya Uchida, Itami, JP;
Masato Fujinaga, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of predicting the topography of a semiconductor workpiece after a plurality of manufacturing processes, such as etching and film deposition, are carried out on the workpiece includes establishing a desired topography for a semiconductor workpiece after sequential performance of a plurality of processes, such as etching, are carried out on the workpiece; specifying conditions, such as temperature and etchant concentration, for each process; establishing a plurality of points in a grid in a space including the workpiece; identifying the materials comprising the workpiece and the concentration of virtual particles representing the topography of the workpiece before a first process; using the modified diffusion model equation to predict the material and concentration of virtual particles after the completion of the first process in the sequence of processes; recording the material and virtual particle concentration at the completion of the first process as a decimal number including an integer part representing the material and a decimal part representing the concentration of virtual particles; and using the modified diffusion model to predict the materials and concentration of virtual particles after a second process beginning with the materials and virtual particle concentrations from the prediction of the first process.