Process for forming a novel buried interconnect structure for

Abstract

An improved density semiconductor device having a buried interconnect is described. The buried interconnect incorporates an elevated source/drain structure formed by selective poly-epi silicon growth and silicidized source/drain/gate interconnect segments. First, a buried conductor is formed over an oxidized portion of a first field oxide. A layer of selective poly-epi silicon is then grown over the surface of the substrate. At least some of the selective poly-epi silicon layer is then oxidized. A layer of refractory metal is then deposited, annealed, and etched to complete the buried interconnect.