The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1994

Filed:

Jun. 28, 1991
Applicant:
Inventor:

Shane R Palmer, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430311 ; 430319 ; 430320 ;
Abstract

A photolithographic mask or a directly written wafer has a pattern formed on a substrate 320. A grid pattern 316 and a layer of resist material 322 are formed on the substrate 320. The grid pattern 316 may be either above or beneath the resist material 320. The grid pattern 316 is scanned, by an e-beam or optical beam for example, without substantially reacting the resist layer 320 to obtain information on the location of the grid pattern 316. Portions of the resist material 320 are then exposed to form a device pattern. The device pattern is determined in part from the information and is also formed over the grid pattern 316. Other systems and methods are also disclosed.


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