The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Jul. 29, 1992
Applicant:
Inventors:
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
422249 ; 1566171 ; 156D / ; 156D / ; 156D / ;
Abstract
An apparatus for growing a single crystal is disclosed which includes a double crucible assembly. The double crucible assembly has an outer crucible and an inner crucible disposed in the outer crucible. A support member is provided for supporting the inner crucible, and the support member is formed of an inorganic oxide non-reactive with silicon oxide. The upper end portion of the inner crucible may be formed of the same inorganic oxide. Alumina or mullite is suitable as the inorganic oxide. With the above construction, silicon single crystals obtained by the crystal growing apparatus will be free of contamination by carbon or heavy metals, and will exhibit excellent quality.