The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
Jun. 03, 1991
Herbert Goronkin, Tempe, AZ (US);
Jun Shen, Phoenix, AZ (US);
Saied N Tehrani, Scottsdale, AZ (US);
X Theodore Zhu, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A high transconductance HFET (21) utilizes nonalloy semiconductor materials (26) to form a strained channel layer (26) that has a deep quantum well (38). The materials utilized for layers adjacent to the channel layer (26) apply strain to the channel layer (26) and create an excess of high mobility carriers in the channel layer (26). The materials also form a deep quantum well (38) that confines the high mobility carriers to the channel (26). The high mobility carriers and the high confinement provide an HFET (21) that has high transconductance, high frequency response, and sharp pinch-off characteristics.