The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1994
Filed:
Mar. 02, 1993
John J DeMarco, East Brunswick, NJ (US);
Christophe Pierrat, Basking Ridge, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top major surface of the workpiece. In a specific embodiment, the resist layer is located underneath a protective layer of polyvinyl alcohol ('PVA'); and a grounded conductive layer, such as a conductive organic layer, is located on the protective layer. After exposing the top major surface of the resulting structure to the direct-writing electron beam, the following steps are performed: